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| ST330SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A FEATURES * Center amplifying gate * International standard case TO-209AE (TO-118) * Hermetic metal case with ceramic insulator RoHS COMPLIANT * Compression bonded encapsulation for heavy duty operations such as severe thermal cycling * Lead (Pb)-free * Designed and qualified for industrial level TO-209AE (TO-118) TYPICAL APPLICATIONS * DC motor controls * Controlled DC power supplies 330 A PRODUCT SUMMARY IT(AV) * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) ITSM I2 t VDRM/VRRM tq TJ Typical 50 Hz 60 Hz 50 Hz 60 Hz TEST CONDITIONS VALUES 330 TC 75 520 9000 9420 405 370 400 to 2000 100 - 40 to 125 kA2s V s C A UNITS A C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 08 ST330S 12 16 20 VDRM/VRRM, MAXIMUM REPETITIVE PEAK IDRM/IRRM MAXIMUM VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM AND OFF-STATE VOLTAGE V mA V 400 800 1200 1600 2000 500 900 1300 1700 2100 50 Document Number: 94409 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST330SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave VALUES 330 75 DC at 75 C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied 520 9000 9420 7570 Sinusoidal half wave, initial TJ = TJ maximum 7920 405 370 287 262 4050 0.834 0.898 0.687 0.636 1.52 600 1000 kA2s V kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, anode supply 12 V resistive load m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM Gate current A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s VALUES 1000 1.0 s 100 UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 50 UNITS V/s mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94409 Revision: 11-Aug-08 ST330SPbF Series Phase Control Thyristors (Stud Version), 330 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp 5 ms TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger IGT TJ = 25 C TJ = 125 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 200 100 50 2.5 1.8 1.1 10 VALUES TYP. MAX. UNITS Vishay High Power Products 10.0 2.0 3.0 20 5.0 200 3 - W A V mA V mA 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting torque, 10 % Approximate weight Case style See dimension - link at the end of datasheet SYMBOL TJ TStg RthJC RthC-hs DC operation Mounting surface, smooth, flat and greased Non-lubricated threads TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.10 0.03 48.5 (425) 535 UNITS C K/W N*m (lbf * in) g TO-209AE (TO-118) RthJC CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.011 0.013 0.017 0.025 0.041 RECTANGULAR CONDUCTION 0.008 0.014 0.018 0.026 0.042 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94409 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST330SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A Maximum Allowable Case T emperature (C) Maximum Allowable Case T emperature (C) 130 120 110 Conduc tion Angle 130 120 110 100 90 80 70 60 0 100 S 330S S T eries RthJC (DC) = 0.10 K/ W S 330S S T eries RthJC (DC) = 0.10 K/ W Conduc tion Period 100 30 90 80 70 0 50 100 150 200 250 300 350 Average On-state Current (A) 60 90 120 180 30 60 90 120 200 300 180 400 DC 500 600 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss(W) 480 440 400 360 320 280 240 200 160 120 80 Conduction Angle 180 120 90 60 30 RMSLimit 0. 08 hS Rt 0. 12 K/ W A = 03 0. K/ W W K/ elt -D 0.2 K/ W 0.3 K/ W 0.4 K/ W 0.6 K /W a R 40 0 0 50 100 150 S 330SS T eries T = 125C J 1.2 K/ W 200 250 300 350 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (C) Fig. 3 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) 650 600 550 500 450 400 350 DC 180 120 90 60 30 R SA th = 03 0. K/ W 0.1 2K /W K/ W 0.3 K/ W 0.4 K/ W 0.6 K /W 0.2 0. 08 W K/ ta el -D R 300 RMSLimit 250 200 150 100 Conduction Period 50 0 0 100 200 300 S 330SS T eries T = 125C J 400 500 1.2 K/ W 600 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emp erature (C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94409 Revision: 11-Aug-08 ST330SPbF Series Phase Control Thyristors (Stud Version), 330 A Peak Half S Wave On-state Current (A) ine 8000 Peak Half S Wave On-state Current (A) ine 7500 7000 6500 6000 5500 5000 4500 4000 3500 1 10 100 Number Of Equal Amplitude Half Cyc le Current Pulses (N) Vishay High Power Products At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 9000 Maximum Non R epetitive S urge Current Vers Pulse T us rain Duration. Control 8000 Of Conduction May Not Be Maintained. Initial T = 125C J No Voltage R eapp lied 7000 Rated VRRM R eapplied 6000 5000 4000 3000 0.01 S 330S S T eries S 330SS T eries 0.1 Pulse T rain Duration (s) 1 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) 1000 Tj = 25 C Tj = 125 C ST330S Series 100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics T ransient T hermal Impedance Z thJC (K/ W) 1 S teady S tate Value RthJC = 0.10 K/ W (DC Operation) 0.1 0.01 S 330SS T eries 0.001 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94409 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST330SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A 100 Instantaneous Gate Voltage (V) R ectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ommended load line for ec <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b) T j=-40 C T j=25 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms T j=125 C 1 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: S T330SS eries 0.1 1 Frequency Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 8 33 2 - 0 3 S 4 16 5 P 6 0 7 PbF 8 Thyristor Essential part number 0 = Converter grade S = Compression bonding stud Voltage code x 100 = VRRM (see Voltage Ratings table) P = Stud base 3/4"-16UNF-2A threads 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95080 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94409 Revision: 11-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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